SFU9230B mosfet equivalent, 200v p-channel mosfet.
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* -5.4A, -200V, RDS(on) = 0.8Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tes.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per.
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